ATF-33143-TR1G Avago Technologies US Inc., ATF-33143-TR1G Datasheet - Page 6

• Manufacturer Part Number: ATF-33143-TR1G
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-TR1G

• Gain: 15dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 5.5V
• Power Dissipation Pd: 600mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 305mA
• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Pin Count: 3 +Tab
• Drain-gate Voltage (max): -5V
• Drain-source Volt (max): 5.5V
• Operating Temperature (min): -65C
• Operating Temperature (max): 160C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current (max): 305mA
• Package Type: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-33143 Typical Performance Curves,
Note:
1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This
6
Figure 18. P
4V, 80 mA at 2 GHz.
circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board
requirements. Circuit losses have been de-embedded from actual measurements.
25
20
15
10
5
0
0
20
1dB
vs. I
40
DS
Active Bias
I
DS
60
(mA)
[1]
80
Tuned for NF @
100
120
continued
Figure 19. P
4V, 80 mA at 900 MHz.
25
20
15
10
5
0
0
20
1dB
vs. I
40
DS
Active Bias
I
DS
60
(mA)
[1]
80
Tuned for NF @
100
120