BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet - Page 4

• Manufacturer Part Number: BLF3G22-30,112
• Description: TRANSISTOR UHF PWR LDMOS SOT608
• Manufacturer: NXP Semiconductors

Specifications of BLF3G22-30,112

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT-608A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4.5A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Typ)
• Power Gain (typ)@vds: 14@28V/15@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 3S
• Drain Source Resistance (max): 300(Typ)mohm
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 24%
• Mounting: Screw
• Mode Of Operation: 2-Tone CW/2-Tone W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934057338112

NXP Semiconductors
BLF3G22-30_1
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 One-tone
7.3 Two-tone
The BLF3G22-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Dq
Fig 1. Power gain and drain efficiency as functions of average load power; typical values
Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical
= 450 mA; P
V
V
values
DS
DS
= 28 V; I
= 28 V; I
L
= 30 W (CW); f = 2170 MHz.
Dq
Dq
= 450 mA; T
= 450 mA; T
(dB)
(dB)
G
G
p
p
Rev. 01 — 21 June 2007
20
16
12
20
16
12
8
4
0
8
4
0
10
10
1
1
h
h
= 25 C; f
= 25 C; f
1
1
G
G
1
1
D
D
p
p
= 2170 MHz; f
= 2170 MHz; f
10
10
2
P
2
P
L(PEP)
= 2170.1 MHz
= 2170.1 MHz
L(AV)
001aag535
001aag536
UHF power LDMOS transistor
(W)
(W)
10
10
BLF3G22-30
2
2
50
40
30
20
10
0
50
40
30
20
10
0
(%)
(%)
D
D
DS
= 28 V;
© NXP B.V. 2007. All rights reserved.
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