BLS6G2731-6G,112 NXP Semiconductors, BLS6G2731-6G,112 Datasheet - Page 11

• Manufacturer Part Number: BLS6G2731-6G,112
• Description: TRANS S-BAND PWR LDMOS SOT975C
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G,112

• Transistor Type: LDMOS
• Frequency: 2.7GHz ~ 3.1GHz
• Gain: 15dB
• Voltage - Rated: 60V
• Current Rating: 3.5A
• Current - Test: 25mA
• Voltage - Test: 32V
• Power - Output: 6W
• Package / Case: SOT957C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934061749112

NXP Semiconductors
14. Contents
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1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ruggedness in class-AB operation. . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
LDMOS S-Band radar power transistor
BLS6G2731-6G
Document identifier: BLS6G2731-6G_1
Date of release: 19 February 2009
All rights reserved.