BLF881S,112 NXP Semiconductors, BLF881S,112 Datasheet - Page 5

• Manufacturer Part Number: BLF881S,112
• Description: TRANSISTOR PWR UHF LDMOS SOT467B
• Manufacturer: NXP Semiconductors

Specifications of BLF881S,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 104V
• Voltage - Test: 50V
• Package / Case: SOT467B
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 140W(Typ)
• Power Gain (typ)@vds: 21@50VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 100@50VpF
• Output Capacitance (typ)@vds: 33.5@50VpF
• Reverse Capacitance (typ): 1@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 49%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063948112

NXP Semiconductors
7. Application information
BLF881_BLF881S
Product data sheet
Fig 3.
(dB)
G
p
23
22
21
20
19
18
17
16
0
V
narrowband 860 MHz test circuit.
function of average load power; typical values
2-Tone power gain and drain efficiency as
DS
= 50 V; I
7.1.1 CW
7.1.2 2-Tone
G
η
7.1 Narrowband RF figures
D
p
40
Dq
= 0.5 A; measured in a common-source
Fig 2.
80
V
CW power gain and drain efficiency as function of load power; typical values
DS
= 50 V; I
120
P
All information provided in this document is subject to legal disclaimers.
0001aal076
L(AV)
Dq
(W)
(dB)
G
Rev. 3 — 7 December 2010
= 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
160
p
23
22
21
20
19
18
17
16
70
60
50
40
30
20
10
0
(%)
0
η
D
G
η
D
p
40
Fig 4.
IMD3
(dBc)
−20
−40
−60
80
0
0
V
narrowband 860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
DS
= 50 V; I
120
BLF881; BLF881S
40
Dq
160
= 0.5 A; measured in a common-source
001aal075
P
UHF power LDMOS transistor
L
(W)
80
200
70
60
50
40
30
20
10
0
(%)
η
D
120
© NXP B.V. 2010. All rights reserved.
P
L(AV)
001aal077
(W)
160
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