BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 7

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
Z
(1) T
(2) T
Fig.9
Class-B operation; V
Z
(1) T
(2) T
Fig.11 Load power as a function of input power;
L
L
(dB)
(W)
G p
P L
= 3.2 + j4.3
= 3.2 + j4.3
600
400
200
30
20
10
h
h
h
h
0
0
= 25 C.
= 70 C.
= 25 C.
= 70 C.
0
0
Power gain as a function of load power;
typical values.
typical values.
(per section); R
(per section); R
(1)
(2)
(1)
DS
DS
= 50 V; I
= 50 V; I
200
5
DQ
DQ
GS
GS
= 2
= 2
= 4
= 4
(2)
400
0.1 A; f = 108 MHz;
0.1 A; f = 108 MHz;
10
(per section).
(per section).
P L (W)
P i (W)
MGE682
MGE684
600
15
7
handbook, halfpage
Class-B operation; V
Z
(1) T
(2) T
Fig.10 Efficiency as a function of load power;
L
(%)
= 3.2 + j4.3
D
80
60
40
20
h
h
0
= 25 C.
= 70 C.
0
typical values.
(1)
(per section); R
(2)
DS
= 50 V; I
200
(2)
(1)
DQ
GS
= 2
= 4
400
0.1 A; f = 108 MHz;
(per section).
Product Specification
P L (W)
BLF278
MGE683
600