BLF546,112 NXP Semiconductors, BLF546,112 Datasheet

TRANSISTOR RF DMOS SOT268A

BLF546,112

Manufacturer Part Number
BLF546,112
Description
TRANSISTOR RF DMOS SOT268A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF546,112

Package / Case
SOT-268A
Transistor Type
2 N-Channel (Dual)
Frequency
500MHz
Gain
13dB
Voltage - Rated
65V
Current Rating
9A
Current - Test
80mA
Voltage - Test
28V
Power - Output
80W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.6 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
145 W
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
80W
Power Gain (typ)@vds
13@28VdB
Frequency (max)
500MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
1.7S
Drain Source Resistance (max)
600@10Vmohm
Input Capacitance (typ)@vds
60@28VpF
Output Capacitance (typ)@vds
46@28VpF
Reverse Capacitance (typ)
15@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
2
Power Dissipation (max)
145000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2394
934002430112
BLF546
BLF546

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF546,112
Manufacturer:
HITTITE
Quantity:
1 400
Product specification
Supersedes data of 1998 Jan 09
DATA SHEET
BLF546
UHF push-pull power MOS
transistor
DISCRETE SEMICONDUCTORS
M3D092
2003 Sep 22

Related parts for BLF546,112

BLF546,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D092 BLF546 UHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jan 09 2003 Sep 22 ...

Page 2

Philips Semiconductors UHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications ...

Page 3

Philips Semiconductors UHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor section (unless otherwise specified) V drain-source voltage DS V gate-source voltage GS I drain current (DC) D ...

Page 4

Philips Semiconductors UHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth ...

Page 5

Philips Semiconductors UHF push-pull power MOS transistor 12 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per ...

Page 6

Philips Semiconductors UHF push-pull power MOS transistor 80 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per ...

Page 7

Philips Semiconductors UHF push-pull power MOS transistor 25 handbook, halfpage G p (dB Class-B operation 2.3 j2.7 (per ...

Page 8

Philips Semiconductors UHF push-pull power MOS transistor handbook, full pagewidth V BIAS input BIAS f = 500 MHz. List of components (see Fig.11) COMPONENT C1, C2 multilayer ceramic chip capacitor; ...

Page 9

Philips Semiconductors UHF push-pull power MOS transistor COMPONENT C18, C19 multilayer ceramic chip capacitor; note 2 C20 multilayer ceramic chip capacitor; note 2 C23, C24 multilayer ceramic chip capacitor; note 1 L1, L3, L26, L28 stripline; note 3 L2 semi-rigid ...

Page 10

Philips Semiconductors UHF push-pull power MOS transistor handbook, full pagewidth straps Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to ...

Page 11

Philips Semiconductors UHF push-pull power MOS transistor 2 handbook, halfpage 200 Class-B operation Fig.13 Input impedance as ...

Page 12

Philips Semiconductors UHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 1.66 4.91 ...

Page 13

Philips Semiconductors UHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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