BLL6H0514-25,112 NXP Semiconductors, BLL6H0514-25,112 Datasheet - Page 7
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BLL6H0514-25,112
Manufacturer Part Number
BLL6H0514-25,112
Description
TRANSISTOR LDMOS DRIVER SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLL6H0514-25112.pdf
(12 pages)
Specifications of BLL6H0514-25,112
Transistor Type
LDMOS
Frequency
1.2GHz
Gain
21dB
Voltage - Rated
100V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
50V
Power - Output
25W
Package / Case
SOT467C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063448112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLL6H0514-25,112
Manufacturer:
HITTITE
Quantity:
1 400
NXP Semiconductors
BLL6H0514-25_4
Product data sheet
Fig 5.
(%)
η
D
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
70
60
50
40
30
20
10
0
0
V
typical values
Drain efficiency as a function of load power;
DS
= 50 V; I
5
10
Dq
= 50 mA; t
Fig 7.
15
20
p
= 300 μs; δ = 10 %.
P
Input return loss as a function of frequency; typical values
L
= 25 W; V
25
All information provided in this document is subject to legal disclaimers.
P
001aak885
L
(3)
30
(W)
(2)
DS
(1)
RL
(dB)
= 50 V; I
35
Rev. 04 — 30 March 2010
in
25
20
15
10
5
0
1.15
Dq
= 50 mA; t
Fig 6.
1.25
(dB)
G
p
p
25
23
21
19
17
15
= 300 μs; δ = 10 %.
1.15
V
Power gain and drain efficiency as function of
frequency; typical values
DS
= 50 V; I
1.35
Dq
1.25
f (GHz)
= 50 mA; t
001aak887
BLL6H0514-25
1.45
LDMOS driver transistor
η
G
p
D
p
= 300 μs; δ = 10 %.
1.35
© NXP B.V. 2010. All rights reserved.
f (GHz)
001aak886
1.45
65
55
45
35
25
15
(%)
η
D
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