BLS6G3135S-120,112 NXP Semiconductors, BLS6G3135S-120,112 Datasheet
BLS6G3135S-120,112
Specifications of BLS6G3135S-120,112
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BLS6G3135S-120,112 Summary of contents
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... BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Pinning Description drain gate [1] source drain gate [1] source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; ...
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... DSX I gate leakage current GSS g forward transconductance fs R drain-source on-state DS(on) resistance 7. Application information Table 7. Mode of operation: pulsed RF unless otherwise specified class-AB production circuit. case Symbol IRL P L(1dB BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Thermal characteristics Characteristics Conditions 180 8 6 Application information = 300 s ...
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... NXP Semiconductors Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions (dB 3 100 mA 300 120 W. ...
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... 100 mA 100 120 W. L Fig 6. Power gain and drain efficiency as functions of frequency; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag825 160 ( (2) (W) 120 ( 120 160 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz V Fig 5. Load power as a function of input power; ...
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... D (%) ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz 100 mA 100 Fig 8. Drain efficiency as a function of load power; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag829 160 (1) P (2) L (W) 120 ( 120 160 0 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 9. Load power as a function of input power; ...
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... C1, C2, C4, C5, C6, C7, C8, C9, C11 C3 C10 C12 C13 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 700A or capacitor of same quality. BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 4-line 6.2 and thickness = 0.64 mm. Table 9 for list of components. List of components (see ...
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... OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 3 ...
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... OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 1 ...
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... Revision history Table 11. Revision history Document ID BLS6G3135-120_6G3135S-120_2 Modifications: BLS6G3135-120_6G3135S-120_1 BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status ...
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... Contact information For additional information, please visit: For sales office addresses, send an email to: BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 BLS6G3135-120; BLS6G3135S-120 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-Band radar power transistor All rights reserved ...