PD57006TR-E STMicroelectronics, PD57006TR-E Datasheet - Page 3

• Manufacturer Part Number: PD57006TR-E
• Description: TRANSISTOR RF POWERSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57006TR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6475-2; PD57006TR-E

PD57006-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Doc ID 12611 Rev 3
Parameter
Parameter
C
= 70°C)
CASE
= 25°C)
-65 to +150
Value
Value
± 20
165
65
20
1
5
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
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