BF 5020 E6327 Infineon Technologies, BF 5020 E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 5020 E6327
• Description: MOSFET N-CH 8V 25MA SOT143-4
• Manufacturer: Infineon Technologies

Specifications of BF 5020 E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 26dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.2dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000474404

1
Electrical Characteristics at T
Parameter
AC Characteristics - (verified by random sampling)
Forward transconductance
V
Gate1 input capacitance
V
Output capacitance
V
Power gain
V
f = 800 MHz
V
f = 45 MHz
Noise figure
V
f = 800 MHz
V
f = 45 MHz
Gain control range
V
Cross-modulation
AGC = 0
AGC = 10 dB
AGC = 40 dB
Input level for k = 1%; f
DS
DS
DS
DS
DS
DS
DS
DS
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, V
D
D
D
D
D
D
D
G2S
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 4...0 V
1)
, V
w
= 50 MHz, f
DS
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 5 V, R
= 4 V
= 4 V
= 4 V
= 4 V,
= 4 V,
= 4 V,
= 4 V,
unw
A
= 25°C, unless otherwise specified
G1
= 60 MHz
= 120 kΩ
3
Symbol
g
C
C
G
F
∆G
X
fs
mod
g1ss
dss
p
p
min.
-
-
-
-
-
-
-
-
-
-
-
Values
106
typ.
2.4
1.2
0.8
98
96
34
26
32
45
1
max.
BF5020...
2009-10-01
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
dBµV