BF 1005S E6327 Infineon Technologies, BF 1005S E6327 Datasheet - Page 4
![MOSFET N-CH 8V 25MA SOT-143](/photos/5/22/52282/448-sot-143_sml.jpg)
BF 1005S E6327
Manufacturer Part Number
BF 1005S E6327
Description
MOSFET N-CH 8V 25MA SOT-143
Manufacturer
Infineon Technologies
Datasheet
1.BF_1005S_E6327.pdf
(8 pages)
Specifications of BF 1005S E6327
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel
Frequency
800MHz
Gain
22dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.6dB
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
22@5VdB
Noise Figure (max)
2.1dB
Frequency (max)
1GHz
Package Type
SOT-143
Pin Count
3 +Tab
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Current - Test
-
Lead Free Status / Rohs Status
Compliant
Other names
BF1005SE6327XT
SP000010949
SP000010949
Total power dissipation P
BF1005S, BF1005SR
Drain current I
mW
mA
220
180
160
140
120
100
80
60
40
20
20
16
14
12
10
0
8
6
4
2
0
0
0
15
0.5
30
1
D
45
=
1.5
60
(V
2
G2S
75
2.5
)
90 105 120 °C
tot
3
= (T
3.5
S
)
T
V
V
S
G2S
150
4.5
4
Total power dissipation P
BF1005SW
Insertion power gain
|S
21
mA
|² =
220
180
160
140
120
100
dB
-15
-25
-35
-45
-55
-65
80
60
40
20
15
-5
0
0
0
(V
15
0.5
G2S
30
1
)
45
1.5
60
2
75
2.5
90 105 120 °C
tot
3
BF1005S...
= (T
2007-04-20
3.5
S
)
T
V
V
S
G2S
150
4.5