BF 5030 E6327 Infineon Technologies, BF 5030 E6327 Datasheet - Page 4

• Manufacturer Part Number: BF 5030 E6327
• Description: MOSFET N-CH 8V 25MA SOT143
• Manufacturer: Infineon Technologies

Specifications of BF 5030 E6327

• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -

Electrical Characteristics at T
Parameter
AC Characteristics - (verified by random sampling)
Forward transconductance
V
V
Gate1 input capacitance
V
V
Output capacitance
V
V
Power gain
V
V
V
V
Noise figure
V
V
V
V
Gain control range
V
V
Cross-modulation k=1%, f
AGC = 0
AGC = 10 dB
AGC = 40 dB
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 3 V, I
= 5 V, I
= 3 V, I
= 5 V, I
= 3 V, I
= 5 V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 5 V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 5 V, I
= 3 V, V
= 5 V, V
D
D
D
D
D
D
D
D
D
D
D
D
D
D
G2S
G2S
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 3...0 V , f = 800 MHz
= 4...0 V , f = 800 MHz
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
w
=50MHz, f
= 3 V
= 4 V
= 3 V
= 4 V
= 3 V
= 4 V
= 3 V, f = 800 MHz
= 3 V, f = 45 MHz
= 4 V, f = 800 MHz
= 4 V, f = 45 MHz
= 3 V, f = 800 MHz
= 3 V, f = 45 MHz
= 4 V, f = 800 MHz
= 4 V, f = 45 MHz
A
= 25°C, unless otherwise specified
unw
=60MHz
4
Symbol
g
C
C
G
F
∆G
X
fs
mod
g1ss
dss
p
p
min.
45
45
90
96
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
2.7
2.8
1.6
1.5
1.3
0.9
1.3
0.9
41
41
24
34
24
34
50
50
94
92
98
max.
BF5030...
2009-05-05
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
dB