MRF21030LR5 Freescale Semiconductor, MRF21030LR5 Datasheet

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MRF21030LR5

Manufacturer Part Number
MRF21030LR5
Description
IC MOSFET RF N-CHAN NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF21030LR5

Transistor Type
N-Channel
Frequency
2.14GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
1µA
Current - Test
250mA
Voltage - Test
28V
Power - Output
30W
Package / Case
NI-400
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
3.5W
Power Gain (typ)@vds
13dB
Frequency (min)
2GHz
Frequency (max)
2.2GHz
Package Type
NI-400
Pin Count
3
Forward Transconductance (typ)
2S
Input Capacitance (typ)@vds
98.5@28VpF
Output Capacitance (typ)@vds
37@28VpF
Reverse Capacitance (typ)
1.3@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
CDMA/FM/TDMA
Number Of Elements
1
Power Dissipation (max)
83300mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
Output Power
Derate above 25°C
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF21030
MRF21030LSR3
MRF21030LR3
LATERAL N - CHANNEL
MRF21030LR3 MRF21030LSR3
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
CASE 465F - 04, STYLE 1
2200 MHz, 30 W, 28 V
M3 (Minimum)
2 (Minimum)
- 65 to +150
MRF21030LSR3
MRF21030LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
83.3
0.48
150
200
NI - 400S
2.1
NI - 400
Rev. 12, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF21030LR5 Summary of contents

Page 1

... Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF21030 Rev. 12, 5/2006 MRF21030LR3 MRF21030LSR3 2200 MHz ...

Page 2

... Vdc 2 3.3 4.5 Vdc — 0.29 0.4 Vdc — 2 — S — 98.5 — pF — 37 — pF — 1.3 — pF — 13 — dB — 33 — % — — dBc — — — — % — 27.5 dBc — Device Data Freescale Semiconductor ...

Page 3

... BIAS C1 Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout ...

Page 4

... Order 5th Order 10 100 , OUTPUT POWER (WATTS) PEP out versus Output Power G ps IMD DRAIN VOLTAGE (VOLTS) DD Figure 8. Power Gain and RF Device Data Freescale Semiconductor −20 −30 −40 −50 −60 −70 6 −22 −24 −26 −28 −30 −32 −34 −36 −38 ...

Page 5

... 2170 MHz load f = 2110 MHz Figure 9. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 25 Ω 2170 MHz source f = 2110 MHz 250 mA PEP DD DQ out source load MHz Ω Ω 2110 15.3 - j9.4 3.7 - j0.78 2140 14.6 - j9.4 3.4 - j0.37 2170 14 ...

Page 6

... MRF21030LR3 MRF21030LSR3 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... G SEE NOTE (LID) ccc aaa (INSULATOR bbb ccc (LID SEATING A PLANE (FLANGE) M (INSULATOR) aaa Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb bbb ccc (LID (INSULATOR) T SEATING PLANE aaa CASE 465E - 04 ISSUE 400 MRF21030LR3 (LID) ccc (INSULATOR) aaa (FLANGE) CASE 465F - 04 ...

Page 8

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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