MRF21030LR5 Freescale Semiconductor, MRF21030LR5 Datasheet - Page 4

• Manufacturer Part Number: MRF21030LR5
• Description: IC MOSFET RF N-CHAN NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF21030LR5

• Transistor Type: N-Channel
• Frequency: 2.14GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 1µA
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 3.5W
• Power Gain (typ)@vds: 13dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: NI-400
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Input Capacitance (typ)@vds: 98.5@28VpF
• Output Capacitance (typ)@vds: 37@28VpF
• Reverse Capacitance (typ): 1.3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/FM/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 83300mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

−25
−30
−35
−40
−45
−50
−55
4
MRF21030LR3 MRF21030LSR3
20
10
60
50
40
30
Figure 3. Class AB Broadband Circuit Performance
16
15
14
13
2080
0
1.0
1.0
V
Two−Tone Measurement,
100 kHz Tone Spacing
V
Two−Tone Measurement, 100 kHz Tone Spacing
DD
Figure 7. Power Gain versus Output Power
DD
V
Two−Tone Measurement, 100 kHz Tone Spacing
DD
= 28 Vdc, f = 2140 MHz
= 28 Vdc, P
Figure 5. Intermodulation Distortion
= 28 Vdc, f = 2140 MHz
2100
IRL
η
P
P
400 mA
300 mA
200 mA
250 mA
400 mA
300 mA
350 mA
350 mA
250 mA
200 mA
out
out
out
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) PEP
versus Output Power
2120
= 30 W (PEP), I
IMD
G
f, FREQUENCY (MHz)
ps
2140
10
10
DQ
= 250 mA
2160
2180
TYPICAL CHARACTERISTICS
2200
100
100
−5
−10
−15
−20
−25
−30
−35
14.5
13.5
−20
−30
−40
−50
−60
−70
30
25
20
15
10
15
14
13
5
1.0
20
Figure 6. Intermodulation Distortion Products
Intermodulation Distortion versus Supply Voltage
0
V
Two−Tone Measurement,
100 kHz Tone Spacing
DD
V
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
Figure 4. CDMA ACPR, Power Gain and
DD
Drain Efficiency versus Output Power
P
I
Two−Tone Measurement, 100 kHz Tone Spacing
= 28 Vdc, I
DQ
out
22
= 28 Vdc, I
= 250 mA, f = 2140 MHz
1
P
= 30 W (PEP)
out
P
, OUTPUT POWER (WATTS Avg.) CDMA
ACPR
out
5th Order
Figure 8. Power Gain and
V
DQ
versus Output Power
24
, OUTPUT POWER (WATTS) PEP
DD
DQ
= 250 mA, f = 2140 MHz
, DRAIN VOLTAGE (VOLTS)
2
= 250 mA, f = 2140 MHz
26
η
IMD
10
3
28
Freescale Semiconductor
G
ps
4
30
G
ps
7th Order
RF Device Data
3rd Order
5
32
100
34
6
−22
−24
−26
−28
−30
−32
−20
−30
−40
−50
−60
−70
−34
−36
−38