MRF21030LR5 Freescale Semiconductor, MRF21030LR5 Datasheet - Page 2

• Manufacturer Part Number: MRF21030LR5
• Description: IC MOSFET RF N-CHAN NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF21030LR5

• Transistor Type: N-Channel
• Frequency: 2.14GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 1µA
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 3.5W
• Power Gain (typ)@vds: 13dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: NI-400
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Input Capacitance (typ)@vds: 98.5@28VpF
• Output Capacitance (typ)@vds: 37@28VpF
• Reverse Capacitance (typ): 1.3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/FM/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 83300mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MRF21030LR3 MRF21030LSR3
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Drain- Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Input Capacitance (Including Input Matching Capacitor in Package)
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
(V
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
(V
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
(V
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 0 Vdc, I
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc, V
= 28 Vdc, V
= 28 Vdc, V
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
D
DS
D
D
D
D
= 20 μA)
GS
GS
GS
GS
out
out
out
out
out
out
out
out
= 100 μAdc)
= 250 mA)
= 1 Adc)
= 1 Adc)
(1)
= 0 Vdc)
= 0 Vdc)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA, f1 = 2110.0 MHz,
= 250 mA, f1 = 2110.0 MHz,
= 250 mA, f1 = 2110.0 MHz,
= 250 mA, f1 = 2110.0 MHz,
C
= 25°C unless otherwise noted)
(1)
V
Symbol
V
V
V
(BR)DSS
I
I
DS(on)
C
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
GSS
IRL
IRL
DSS
g
oss
η
η
rss
iss
fs
ps
ps
Min
65
—
—
—
—
—
—
—
—
—
—
—
12
31
—
—
2
2
0.29
98.5
Typ
- 30
- 13
- 30
- 13
3.3
1.3
37
13
33
13
33
—
—
—
3
2
Freescale Semiconductor
- 27.5
Max
4.5
0.4
—
—
—
—
—
—
—
—
—
—
—
- 9
1
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
pF
pF
pF
%
%
S