MRF21030LR5 Freescale Semiconductor, MRF21030LR5 Datasheet - Page 5

• Manufacturer Part Number: MRF21030LR5
• Description: IC MOSFET RF N-CHAN NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF21030LR5

• Transistor Type: N-Channel
• Frequency: 2.14GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 1µA
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 3.5W
• Power Gain (typ)@vds: 13dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: NI-400
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Input Capacitance (typ)@vds: 98.5@28VpF
• Output Capacitance (typ)@vds: 37@28VpF
• Reverse Capacitance (typ): 1.3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/FM/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 83300mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
f = 2170 MHz
f = 2110 MHz
Z
load
Figure 9. Series Equivalent Source and Load Impedance
Z
Z
Input
Matching
Network
source
load
2140
2170
2110
MHz
f
= Test circuit impedance as measured from
= Test circuit impedance as measured
V
DD
f = 2170 MHz
gate to ground.
from drain to ground.
= 28 V, I
Z
Z
source
o
= 25 Ω
15.3 - j9.4
14.6 - j9.4
14.3 - j8.8
Z
DQ
source
Device
Under Test
Ω
= 250 mA, P
f = 2110 MHz
Z
source
out
Z
load
= 30 W PEP
3.7 - j0.78
3.4 - j0.37
3.0 + j0.13
Z
load
Ω
Output
Matching
Network
MRF21030LR3 MRF21030LSR3
5