BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet - Page 8
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BFR93A,215
Manufacturer Part Number
BFR93A,215
Description
TRANS NPN 35MA 12V 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR93A215.pdf
(13 pages)
Specifications of BFR93A,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
90
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
6 GHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
15V
Emitter-base Voltage
2V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
40
Frequency (max)
6GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1651-2
933551570215
BFR93A T/R
933551570215
BFR93A T/R
NXP Semiconductors
1997 Oct 29
handbook, full pagewidth
handbook, full pagewidth
NPN 6 GHz wideband transistor
I
I
C
C
= 30 mA; V
= 30 mA; V
CE
CE
= 8 V; Z
= 8 V; T
o
amb
= 50 ; T
= 25 C.
+ j
– j
Fig.18 Common emitter forward transmission coefficient (S
180 o
amb
Fig.17 Common emitter input reflection coefficient (S
0
0.2
0.2
150 o
= 25 C.
150 o
0.5
0.5
0.2
120 o
100
120 o
1200
800
0.5
1200 MHz
500
1000
1000
200
200
100 MHz
90 o
90 o
8
1
1
1
500
800
10
2
60 o
60 o
20
2
2
5
10
MBB259
30 o
30 o
MBB261
30
5
5
11
10
10
∞
).
0 o
21
).
ϕ
ϕ
Product specification
BFR93A