BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 3
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BFR92AW,135
Manufacturer Part Number
BFR92AW,135
Description
TRANS NPN 25MA 15V 5GHZ UMT3
Manufacturer
NXP Semiconductors
Datasheet
1.BFR92AW115.pdf
(13 pages)
Specifications of BFR92AW,135
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
65
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934022940135
BFR92AW /T3
BFR92AW /T3
BFR92AW /T3
BFR92AW /T3
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 5 GHz wideband transistor
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
Fig.2 Power derating curve
50
PARAMETER
PARAMETER
100
150
T
s
MLB540
( C)
o
200
Rev. 03 - 12 March 2008
open emitter
open base
open collector
up to T
up to T
s
s
= 93 C; see Fig.2; note 1
= 93 C; note 1
CONDITIONS
CONDITIONS
MIN.
65
VALUE
Product specification
190
BFR92AW
20
15
2
25
300
+150
150
MAX.
3 of 13
UNIT
K/W
V
V
V
mA
mW
UNIT
C
C