BFG425W,115 NXP Semiconductors, BFG425W,115 Datasheet - Page 2
BFG425W,115
Manufacturer Part Number
BFG425W,115
Description
TRANS NPN 4.5V 25GHZ SOT-343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG425W115.pdf
(13 pages)
Specifications of BFG425W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain
20dB
Power - Max
135mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 25mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
50 @ 25mA @ 2V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
25000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.03 A
Power Dissipation
135 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1644-2
934047470115
BFG425W T/R
934047470115
BFG425W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFG425W,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
2010 Sep 15
V
V
I
P
h
C
f
G
F
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
C
T
FE
telephones, cordless telephones (PHS, DECT, etc.)
CBO
CEO
tot
NPN 25 GHz wideband transistor
re
max
collector-base voltage
collector-emitter voltage open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
PARAMETER
open emitter
T
I
I
I
I
I
C
C
C
C
C
s
= 25 mA; V
= 0; V
= 25 mA; V
= 25 mA; V
= 2 mA; V
103 C
CB
= 2 V; f = 1 MHz
CE
CE
CE
CE
= 2 V; f = 2 GHz;
CAUTION
CONDITIONS
= 2 V; T
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
2
PINNING
handbook, halfpage
j
= 25 C
Marking code: P5*
PIN
1
2
3
4
Fig.1 Simplified outline SOT343R.
S
amb
amb
=
opt
= 25 C
= 25 C
emitter
base
emitter
collector
3
2
Top view
50
MIN.
DESCRIPTION
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
MSB842
4
1
Product specification
25
80
95
25
20
1.2
TYP.
BFG425W
10
4.5
30
135
120
MAX.
V
V
mA
mW
fF
GHz
dB
dB
UNIT