BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 7
![TRANS NPN 70MA 15V 9GHZ SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFS520,115
Manufacturer Part Number
BFS520,115
Description
TRANS NPN 70MA 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS520115.pdf
(13 pages)
Specifications of BFS520,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1654-2
934021420115
BFS520 T/R
934021420115
BFS520 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS520,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 5 mA; V
= 5 mA; V
o
CE
CE
= 50 .
o
= 6 V;
= 6 V;
= 50 .
G max = 9.1 dB
pot. unst.
region
180°
180°
0
0
−135°
−135°
135°
135°
0.2
0.2
0.2
0.2
0.2
0.2
G = 8,5 dB
stability
circle
G = 8 dB
0.5
0.5
0.5
0.5
Γ MS
G = 7 dB
Fig.12 Noise circle.
F min = 1. 9 dB
Fig.13 Noise circle.
F = 3 dB
0.5
0.5
Γ OPT
F = 2 dB
F = 2 dB
F = 1.5 dB
−90°
−90°
F = 2.5 dB
90°
90°
7
1
1
1
1
1
1
F min = 1. 1 dB
F = 3 dB
Γ OPT
2
2
2
2
2
2
5
5
−45°
−45°
45°
45°
5
5
5
5
MRC077
MRC078
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS520