SD1275 STMicroelectronics, SD1275 Datasheet

TRANS NPN RF MICROWAVE VHF M135

SD1275

Manufacturer Part Number
SD1275
Description
TRANS NPN RF MICROWAVE VHF M135
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD1275

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
16V
Gain
9dB
Power - Max
70W
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 250mA, 5V
Current - Collector (ic) (max)
8A
Mounting Type
Chassis, Stud Mount
Package / Case
M135
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Other names
497-5455
SD1275

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SD1275
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
SD1275
Manufacturer:
ST
0
Part Number:
SD1275-01
Manufacturer:
FSC
Quantity:
40
Part Number:
SD1275-01
Manufacturer:
ST
Quantity:
20 000
Part Number:
SD1275-1
Manufacturer:
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0
FEATURES SUMMARY
DESCRIPTION
The SD1275 is a 13.6 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275 utilizes an emitter
ballasted die geometry to withstand severe load
mismatch conditions.
Table 1. Order Codes
May 2004
160 MHz
13.6 VOLTS
COMMON EMITTER
P
OUT
Order Codes
= 40 W MIN. WITH 9 dB GAIN
SD1275
Marking
SD1275
RF POWER BIPOLAR TRANSISTORS
VHF MOBILE APPLICATIONS
Figure 1. Package
Figure 2. Pin Connection
Package
M135
1. Collector
2. Base
.380 4L STUD (M135)
epoxy sealed
BLACK CARDBOARDS
Packaging
3. Emitter
4. Base
SD1275
REV. 2
1/7

Related parts for SD1275

SD1275 Summary of contents

Page 1

... COMMON EMITTER ■ MIN. WITH 9 dB GAIN ■ OUT DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. Table 1. Order Codes Order Codes ...

Page 2

... SD1275 Table 2. Absolute Maximum Ratings (T Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Collector-Emitter Voltage CES V Emitter-Base Voltage EBO I Device Current C P Power Dissipation DISS T Junction Temperature J Storage Temperature T STG Table 3. Thermal Data Symbol R Junction-Case Thermal Resistance TH(j-c) ELECTRICAL SPECIFICATIONS (T Table 4. Static ...

Page 3

... Pin = 5 W Pin = 4 W Pin = Output Power vs. Input Power f=145MHz 20 f=175MHz f=160MHz 10 Vcc = 13.6V 0.25 0.5 1.0 1.5 2.0 2.5 Pin Input Power (watts) Output Power vs. Supply Voltage F = 145 MHz 60 Pin = 5 W Pin = Pin = Vcc Supply Voltage (volts) SD1275 3.0 20 3/7 ...

Page 4

... SD1275 Figure 7. Power Output vs Supply Voltage (160 MHz) Output Power vs. Supply Voltage F = 160 MHz Vcc Supply Voltage (volts) (1) Table 6. Impedance Data FREQ. 160 MHz Note 3 12 4/7 Pin = 5 W Pin = 4 W Pin = (Ω 0.4 Z (Ω 0.1 ...

Page 5

... Note: Drawing is not to scale. millimeters Typ Max 5.84 9.78 0.18 8.38 3.30 12.45 2.54 4.45 19.05 A .112x45˚ ØC E inches Min Typ 0.220 0.980 0.370 0.004 0.320 0.100 0.450 0.090 0.155 SD1275 Max 0.230 0.385 0.007 0.330 0.130 0.490 0.100 0.175 0.750 5/7 ...

Page 6

... SD1275 REVISION HISTORY Table 8. Revision History Date Revision June-1993 1 25-May-2004 2 6/7 Description of Changes First Issue Stylesheet update. No content change. ...

Page 7

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES www.st.com SD1275 7/7 ...

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