BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet - Page 3

• Manufacturer Part Number: BFR93AW,115
• Description: TRANS NPN 12V 35MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 35mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: NPN
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Noise Figure (db Typ @ F): 1.5dB @ 1GHz
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022950115::BFR93AW T/R::BFR93AW T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
1995 Sep 18
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
th j-s
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
Fig.2 Power derating curve.
50
PARAMETER
PARAMETER
100
150
T
s
MLB540
( C)
o
200
open emitter
open base
open collector
up to T
up to T
3
s
s
= 93 C; see Fig.2; note 1
= 93 C; note 1
CONDITION
CONDITION




65


MIN.
VALUE
190
Product specification
BFR93AW
15
12
2
35
300
+150
150
MAX.
UNIT
K/W
V
V
V
mA
mW
C
C
UNIT