BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet

TRANS NPN 35MA 12V 6GHZ SOT23

BFR93AR,215

Manufacturer Part Number
BFR93AR,215
Description
TRANS NPN 35MA 12V 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93AR,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40 @ 30 mA @ 5 V
Dc Current Gain Hfe Max
40 @ 30mA @ 5V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
6000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933653660215
BFR93AR T/R
BFR93AR T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
I
I
I
I
Table 1.
Symbol Parameter
V
V
I
P
C
f
G
NF
V
C
T
CBO
CEO
tot
O
re
UM
BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006
Very high power gain
Low noise figure
Very low intermodulation distortion
RF wideband amplifiers and oscillators
collector-base voltage
collector-emitter voltage open base
collector current
total power dissipation
feedback capacitance
transition frequency
unilateral power gain
noise figure
output voltage
Quick reference data
Conditions
open emitter
T
I
I
f = 500 MHz;
I
T
I
IMD = 60 dB; I
V
T
f
C
C
C
C
p
sp
amb
S
amb
CE
f = 1 GHz
f = 2 GHz
= 0 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
=
f
= 8 V; R
q
= 25 C
= 25 C;
95 C
opt
f
r
; T
= 793.25 MHz
amb
CE
CE
L
CE
CE
= 75 ;
= 8 V; f = 1 GHz;
= 5 V; f = 1 MHz;
C
= 25 C
= 5 V;
= 8 V;
= 30 mA;
Min
-
-
-
-
-
-
-
-
-
-
Product data sheet
0.6
Typ
-
-
-
-
6
13
7
1.9
425
Max
15
12
35
300
-
-
-
-
-
-
Unit
V
V
mA
mW
pF
GHz
dB
dB
dB
mV

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BFR93AR,215 Summary of contents

Page 1

BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features I Very high power gain I Low noise figure ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFR93AR 4. Marking Table 4. Type number BFR93AR 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg BFR93AR_1 Product data sheet ...

Page 3

... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) [ the temperature at the solder point of the collector pin Characteristics Table 7. Characteristics Symbol Parameter I collector-base cut-off current CBO h DC current gain FE C collector capacitance c C emitter capacitance ...

Page 4

... NXP Semiconductors choke turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig 1. Intermodulation distortion and second harmonic MATV test circuit 400 P tot (mW) 300 200 100 100 Fig 2. Power derating curve BFR93AR_1 Product data sheet 1 270 input 3.3 pF mra702 h 150 ...

Page 5

... NXP Semiconductors (pF) 0.8 0.6 0 MHz Fig 4. Collector capacitance as a function of collector-base voltage; typical values 30 gain (dB 500 MHz. CE Fig 6. Gain as a function of collector current; typical values BFR93AR_1 Product data sheet mbb252 f T (GHz ( Fig 5. Transition frequency as a function of collector mbb255 ...

Page 6

... NXP Semiconductors 50 gain (dB MSG mA Fig 8. Gain as a function of frequency; typical values (mS) 20 1.6 2 800 MHz Fig 10. Circles of constant noise figure; typical values BFR93AR_1 Product data sheet mbb257 gain (dB) G max (MHz) Fig 9. Gain as a function of frequency; typical values mbb253 ...

Page 7

... NXP Semiconductors 4 NF (dB Fig 12. Minimum noise figure as a function of collector current; typical values 40 IMD (dB 425 mV (52.6 dBmV 793.25 MHz amb Measured in MATV test circuit; see Fig 14. Intermodulation distortion; typical values BFR93AR_1 Product data sheet mcd094 GHz (dB) 1 GHz 500 MHz 2 10 ...

Page 8

... NXP Semiconductors + mA Fig 16. Common emitter input reflection coefficient (S 180 mA amb Fig 17. Common emitter forward transmission coefficient (S BFR93AR_1 Product data sheet 1 0.5 0.2 0.5 1200 1000 0.2 800 1 0 500 200 0.2 100 MHz 0 amb ) 11 90 120 100 200 150 ...

Page 9

... NXP Semiconductors 180 mA amb Fig 18. Common emitter reverse transmission coefficient ( mA Fig 19. Common emitter output reflection coefficient (S BFR93AR_1 Product data sheet 90 120 1200 800 150 500 200 100 MHz 150 120 0.5 0.2 0.2 0 1000 1200 0.2 0 amb ) 22 Rev. 01 — 30 November 2006 ...

Page 10

... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 20. Package outline SOT23 BFR93AR_1 Product data sheet scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...

Page 11

... NXP Semiconductors 9. Abbreviations Table 8. Acronym NPN PNP RF MATV 10. Revision history Table 9. Revision history Document ID Release date BFR93AR_1 20061130 BFR93AR_1 Product data sheet Abbreviations Description Negative Positive Negative Positive Negative Positive Radio Frequency Master Antenna Television Data sheet status Product data sheet Rev. 01 — ...

Page 12

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 13

... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Legal information ...

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