BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 11

• Manufacturer Part Number: BFG520W,115
• Description: TRANS NPN 6V 70MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030630115; BFG520W T/R; BFG520W T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistors
V
V
CE
CE
= 6 V; I
= 6 V; I
C
C
= 20 mA.
= 20 mA; Z
Fig.20 Common emitter reverse transmission coefficient (S
o
Fig.21 Common emitter output reflection coefficient (S
= 50
180
180
o
o
0.25
0
135
135
0.2
0.20
0.2
135
135
o
o
o
o
0.2
0.15
0.5
0.5
Rev. 04 - 21 November 2007
0.10
0.5
0.05
90
90
1
90
1
1
90
3 GHz
o
o
o
o
40 MHz
2
3 GHz
2
2
40 MHz
5
22
45
45
45
45
BFG520W; BFG520W/X
); typical values.
o
12
o
5
5
o
o
); typical values.
MLB817
MLB816
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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