BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 5

• Manufacturer Part Number: BFG520W,115
• Description: TRANS NPN 6V 70MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030630115; BFG520W T/R; BFG520W T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
f = 1 GHz; T
V
(GHz)
CE
Fig.3
h
f
150
FE
100
T
Fig.5
= 6 V.
50
12
0
8
0
4
10
1
1
amb
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
= 25 C.
1
10
10
I
C
(mA)
I
C
(mA)
V
MLB809
MLB807
CE
6 V
3 V
=
10
10
Rev. 04 - 21 November 2007
2
2
handbook, halfpage
I
C
(pF)
C re
= 0; f = 1 MHz.
Fig.4
0.6
0.4
0.2
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
2.5
BFG520W; BFG520W/X
5
Product specification
7.5
V
CB
MLB808
(V)
5 of 15
10