BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 15

• Manufacturer Part Number: BFG520W,115
• Description: TRANS NPN 6V 70MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030630115; BFG520W T/R; BFG520W T/R

NXP Semiconductors
Revision history
Revision history
Document ID
BFG520W_N_4
Modifications:
BFG520W_X_3
BFG520W_2
BFG520W_1
Release date
20071121
19981002
19950824
19940829
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Page 2; text in Pinning table changed
Data sheet status
Product data sheet
Product specification
Product specification
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
BFG520W; BFG520W/X
Change notice
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NPN 9 GHz wideband transistors
Document identifier: BFG520W_X_N_4
Supersedes
BFG520W_X_3
BFG520W_2
BFG520W_1
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Date of release: 21 November 2007
All rights reserved.