BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 3

TRANS NPN 6V 70MA SOT343N

BFG520W,115

Manufacturer Part Number
BFG520W,115
Description
TRANS NPN 6V 70MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG520W,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934030630115
BFG520W T/R
BFG520W T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistors
(mW)
P tot
s
s
600
400
200
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG248
( C)
o
open emitter
R
open collector
T
s
BE
200
Rev. 04 - 21 November 2007
= 0
85 C; see Fig.2; note 1
CONDITIONS
T
s
85 C; note 1
CONDITIONS
BFG520W; BFG520W/X
65
MIN.
20
15
2.5
70
500
+150
175
VALUE
Product specification
MAX.
180
3 of 15
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W

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