BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 4

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
3. I
4. I
September 1995
I
h
C
C
C
f
G
F
V
d
P
ITO
SYMBOL
j
CBO
T
FE
2
O
L1
= 25 C unless otherwise specified.
c
e
re
NPN 6 GHz wideband transistor
UM
V
V
f
measured at f
V
f
measured at f
f
measured at f
G
q
C
p
C
p
im
p
q
q
UM
UM
= 803.25 MHz; f
= 250 MHz; f
= 1000 MHz; f
= 45 mA; V
= 45 mA; V
= V
= V
= V
= 60 dB (DIN 45004B, par 6.3: 3-tone); I
is the maximum unilateral power gain, assuming S
=
O
O
O
10
at d
= 280 mV;
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note1)
minimum noise figure
output voltage
second order intermodulation
distortion
output power at 1 dB gain
compression
third order intercept point
6 dB; V
log
im
CE
CE
(p+q r)
(p+q)
(2p q)
= 60 dB; f
------------------------------------------------------------- - dB.
q
q
1
= 10 V; R
= 560 MHz;
= 10 V; R
r
= 1001 MHz;
–
r
= V
= 810 MHz.
= 805.25 MHz;
and f
= 793.25 MHz.
PARAMETER
S
O
11
(2q p
S
2
6 dB;
p
21
L
L
= 795.25 MHz;
= 75 ; T
= 50 ; T
1
).
2
–
S
22
2
amb
amb
= 25 C;
= 25 C;
C
= 45 mA; V
I
I
I
I
I
I
I
T
I
T
I
T
f = 500 MHz
f = 1 GHz
note 2
note 3
I
T
note 4
E
C
C
E
C
C
C
C
C
C
amb
amb
amb
s
s
amb
= 0; V
= i
= 30 mA; V
= 45 mA; V
= i
= i
= 45 mA; V
= 30 mA; V
= 45 mA; V
= 45 mA; V
=
=
e
e
c
= 25 C
= 25 C
= 25 C
= 25 C; measured at f = 1 GHz
opt
opt
= 0; V
= 0; V
= 0; V
4
12
CB
; I
; I
is zero and
C
C
CE
CONDITIONS
= 10 V
= 45 mA; V
= 45 mA; V
CB
CE
EB
= 10 V; R
CE
CE
CE
CE
CE
CE
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 5 V
= 10 V
= 10 V; f = 1 GHz;
= 5 V; f = 1 GHz;
= 10 V; f = 1 GHz;
= 10 V; R
L
CE
CE
= 75 ; T
L
= 10 V;
= 10 V;
= 50 ;
amb
= 25 C;
45
4
4
11.5
MIN. TYP. MAX.
90
100
0.9
2.9
0.5
6
13.5
2.7
3
500
21.5
34
Product specification
51
100
2
4.5
0.8
BFG94
nA
pF
pF
pF
GHz
GHz
dB
dB
dB
mV
dB
dBm
dBm
UNIT