BFG590/X,215 NXP Semiconductors, BFG590/X,215 Datasheet - Page 2

• Manufacturer Part Number: BFG590/X,215
• Description: TRANS NPN 15V 200MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG590/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 @ 70 mA @ 8 V
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022990215; BFG590/X T/R; BFG590/X T/R

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
QUICK REFERENCE DATA
BFG590
BFG590/X
V
V
I
P
h
C
f
G
|S
TYPE NUMBER
SYMBOL
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
CBO
CEO
tot
re
NPN 5 GHz wideband transistors
UM
21
|
2
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
PARAMETER
CODE
%MH
%MN
open emitter
open base
T
I
I
I
I
f = 900 MHz; T
I
f = 900 MHz; T
Rev. 04 - 12 November 2007
C
C
C
C
C
s
= 35 mA; V
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
60 C
CE
CONDITIONS
= 8 V; f = 1 MHz
CE
CE
CE
CE
PINNING
amb
amb
= 8 V
= 4 V; f = 1 GHz
= 4 V;
= 4 V;
= 25 C
= 25 C
PIN
1
2
3
4
handbook, 2 columns
Fig.1 Simplified outline SOT143B.
collector
base
emitter
emitter
Top view
1
4
BFG590
50
MIN.
BFG590; BFG590/X
DESCRIPTION
90
0.7
5
13
11
TYP.
MSB014
Product specification
3
2
collector
emitter
base
emitter
20
15
200
400
280
MAX.
BFG590/X
2 of 11
V
V
mA
mW
pF
GHz
dB
dB
UNIT