SD1727 STMicroelectronics, SD1727 Datasheet - Page 2

• Manufacturer Part Number: SD1727
• Description: TRANSISTOR NPN RF HF SSB M164
• Manufacturer: STMicroelectronics

Specifications of SD1727

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 55V
• Gain: 14dB
• Power - Max: 233W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 18 @ 1.4A, 6V
• Current - Collector (ic) (max): 10A
• Mounting Type: Chassis, Stud Mount
• Package / Case: M164
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Other names: 497-5459; SD1727

SD1727 (THX15)
Table 2. Absolute Maximum Ratings (T
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (T
Table 4. Static
Table 5. Dynamic
Note: The SD1727 is also usable in Class A at 40 V. Typical performance is:
Note: 1. f
2/9
Symbol
Symbol
Symbol
Symbol
BV
BV
BV
IMD
R
BV
P
G
P
P
V
V
V
T
I
I
η
C
OUT
TH(j-c)
h
CEO
CES
DISS
OUT
P
CBO
CEO
EBO
T
STG
I
c
FE
OB
CBO
CES
CEO
EBO
C
(1)
1
J
(1)
(1)
= 30.00 MHz; f
= 30 W PEP, G
I
I
I
I
V
V
V
f = 30 MHz; V
P
P
P
f = 1 MHz; V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Junction-Case Thermal Resistance
C
C
C
E
CE
CE
CE
OUT
OUT
OUT
= 10 mA; I
= 100 mA; I
= 100 mA; V
= 100 mA; I
2
= 30 V; I
= 60 V; I
= 6 V; I
P
= 30.001 MHz
= 150 W PEP; V
= 150 W PEP; V
= 150 W PEP; V
= 14 dB, IMD = – 40dBc
C
CB
C
E
E
= 1.4 A
CE
E
B
= 0 mA
= 0 mA
= 0 mA
BE
= 50 V
= 0 mA
= 0 mA
= 50 V; I
= 0 V
Test Conditions
Test Conditions
CE
CE
CE
Parameter
Parameter
case
CQ
= 50 V; I
= 50 V; I
= 50 V; I
= 100 mA
= 25°C)
case
CQ
CQ
CQ
= 25°C)
= 100 mA
= 100 mA
= 100 mA
Min.
Min.
110
110
150
4.0
55
18
14
37
—
—
—
—
– 65 to +150
Value
Value
Value
Value
+200
0.75
Typ.
Typ.
110
233
4.0
55
10
—
—
—
—
—
—
—
—
—
—
—
—
Max.
Max.
43.5
–30
220
—
—
—
—
—
—
—
5
5
°C/W
Unit
Unit
Unit
Unit
dBc
mA
mA
dB
°C
°C
pF
W
—
W
%
V
V
V
V
V
V
A
V