SD1731 STMicroelectronics, SD1731 Datasheet

TRANSISTOR NPN RF HF SSB M174

SD1731

Manufacturer Part Number
SD1731
Description
TRANSISTOR NPN RF HF SSB M174
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD1731

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
55V
Gain
13dB
Power - Max
233W
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 10A, 6V
Current - Collector (ic) (max)
20A
Mounting Type
Surface Mount
Package / Case
M174
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Other names
497-5461
SD1731

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SD1731
Manufacturer:
ST
0
Part Number:
SD1731
Manufacturer:
ST
Quantity:
20 000
Part Number:
SD1731(TH562)
Manufacturer:
ST
0
Part Number:
SD1731-14
Manufacturer:
ST
0
Part Number:
SD1731F
Manufacturer:
ST
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FEATURES SUMMARY
DESCRIPTION
The SD1731 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communica-
tions. This device utilizes emitter ballasting for im-
proved ruggedness and reliability.
Table 1. Order Codes
June 2004
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
EFFICIENCY 40%
COMMON EMITTER
GOLD METALLIZATION
P
OUT
SD1731 (TH562)
Order Codes
= 220 W PEP WITH 13 dB GAIN
Marking
SD1731
RF POWER BIPOLAR TRANSISTORS
Figure 1. Package
Figure 2. Pin Connection
Package
M174
HF SSB APPLICATIONS
1. Collector
2. Emitter
SD1731 (TH562)
.500 4L FL (M174)
epoxy sealed
PLASTIC TRAYS
3. Base
4. Emitter
Packaging
REV. 2
1/9

Related parts for SD1731

SD1731 Summary of contents

Page 1

... GOLD METALLIZATION ■ 220 W PEP WITH 13 dB GAIN ■ OUT DESCRIPTION The SD1731 epitaxial silicon NPN planar transistor designed primarily for SSB communica- tions. This device utilizes emitter ballasting for im- proved ruggedness and reliability. Table 1. Order Codes Order Codes SD1731 (TH562) ...

Page 2

... SD1731 (TH562) Table 2. Absolute Maximum Ratings (T Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Device Current C P Power Dissipation (T DISS T Junction Temperature J Storage Temperature T STG Table 3. Thermal Data Symbol R Junction-Case Thermal Resistance TH(j-c) R Case-Heatsink Thermal Resistance TH(c-s) ELECTRICAL SPECIFICATIONS Table 4. Static (T = 25° ...

Page 3

... TYPICAL PERFORMANCE Figure 3. Power Output PEP vs Power Input Figure 5. Intermodulation Distortion vs Power Output PEP Figure 4. Collector Efficiency vs Power Output PEP SD1731 (TH562) 3/9 ...

Page 4

... SD1731 (TH562) Figure 6. Power Gain vs Power Output PEP Figure 7. Collector Base Capacitance vs Collector Emitter Voltage 4/9 ...

Page 5

... Twisted Pair 4:1 Transformer, 4 Turns Made with 1.0mm Enameled on toriod Phillips 4C6 97180 T3 Feedback Transformer Primary: 2 Turns of 1mm Enameled Wire Secondary: 8 Turns of 1mm Enameled Wire T4 Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted 1.2mm Wires on Ferrite Core Phillips 4C6 97200 SD1731 (TH562) 5/9 ...

Page 6

... SD1731 (TH562) Figure 9. Mounting Circuit BIAS CIRCUIT Figure 10. Bias Circuit 6/9 ...

Page 7

... Figure 11. M174 Package Dimensions Note: Drawing is not to scale. millimeters Typ Max 5.84 3.18 6.48 18.54 3.18 24.89 12.83 0.18 2.79 4.45 7.11 26.67 SD1731 (TH562) inches Min Typ Max 0.220 0.230 0.125 0.245 0.255 0.720 0.730 0.125 0.970 0.980 0.495 0.505 ...

Page 8

... SD1731 (TH562) REVISION HISTORY Table 8. Revision History Date Revision July-1995 1 8-June-2004 2 8/9 Description of Changes First Issue Stylesheet update. No content change. ...

Page 9

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES www.st.com SD1731 (TH562) 9/9 ...

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