BT300S-600R,118 NXP Semiconductors, BT300S-600R,118 Datasheet - Page 3

• Manufacturer Part Number: BT300S-600R,118
• Description: THYRISTOR 8A 600V DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT300S-600R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 5A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 71A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 71 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3684-2; 934048840118; BT300S-600R /T3

Philips Semiconductors
September 1997
Thyristors
8
6
4
2
0
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible rms current I
9
8
7
6
5
4
3
2
1
0
-50
0
on-state current I
1000
Ptot / W
IT(RMS) / A
100
10
conduction
angle
degrees
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
I
T
Tj initial = 25 C max
1
dI /dt limit
sinusoidal currents, t
form
factor
T
a = form factor = I
4
2.8
2.2
1.9
1.57
a
T
0
I TSM
4
time
2
100us
TSM
2.8
IT(AV) / A
BT300
, versus pulse width t
BT300S
Tmb / C
3
BT300
50
T / s
2.2
T(RMS)
4
p
1.9
1ms
T(AV)
/ I
10ms.
100
T(AV)
Tmb(max) / C
, where
5
.
a = 1.57
107 C
tot
, versus
mb
T(RMS)
p
, for
10ms
.
6
114.5
121.5
111
118
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
70
60
50
40
30
20
10
0
24
20
16
12
1
0.01
(T
8
4
0
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
10
0.1
surge duration / s
, versus number of cycles, for
BT300
BT151
BT150
Tj / C
50
I
mb
Tj initial = 25 C max
T
100
BT300S series
Product specification
1
T
107˚C.
BT300M series
100
I TSM
time
Rev 1.100
1000
150
10
j
.