EC103D1,412 NXP Semiconductors, EC103D1,412 Datasheet - Page 5

• Manufacturer Part Number: EC103D1,412
• Description: THYRISTOR GATE 400V 0.8A TO-92
• Manufacturer: NXP Semiconductors

Specifications of EC103D1,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 12µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• On-state Rms Current (it Rms): 0.8 A
• Forward Voltage Drop: 1.2 V
• Gate Trigger Voltage (vgt): 0.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 3 uA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056686412

NXP Semiconductors
5. Thermal characteristics
Table 4.
EC103D1_2
Product data sheet
Symbol
R
R
Fig 6.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to lead as a function of pulse duration
5
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
10
4
10
3
Conditions
see
printed-circuit board
mounted; lead length 4 mm
Rev. 02 — 31 July 2008
Figure 6
10
2
10
1
Min
-
-
Typ
-
150
P
Thyristor, sensitive gate
1
t
p
T
EC103D1
t
p
© NXP B.V. 2008. All rights reserved.
Max
60
-
(s)
003aaa108
=
t
T
t
p
10
Unit
K/W
K/W
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