EC103D1,412 NXP Semiconductors, EC103D1,412 Datasheet - Page 5
![THYRISTOR GATE 400V 0.8A TO-92](/photos/1/39/13964/to-92_pkg_sml.jpg)
EC103D1,412
Manufacturer Part Number
EC103D1,412
Description
THYRISTOR GATE 400V 0.8A TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.EC103D1412.pdf
(12 pages)
Specifications of EC103D1,412
Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.35V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
12µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
On-state Rms Current (it Rms)
0.8 A
Forward Voltage Drop
1.2 V
Gate Trigger Voltage (vgt)
0.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
3 uA
Holding Current (ih Max)
5 mA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056686412
NXP Semiconductors
5. Thermal characteristics
Table 4.
EC103D1_2
Product data sheet
Symbol
R
R
Fig 6.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to lead as a function of pulse duration
5
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
10
4
10
3
Conditions
see
printed-circuit board
mounted; lead length 4 mm
Rev. 02 — 31 July 2008
Figure 6
10
2
10
1
Min
-
-
Typ
-
150
P
Thyristor, sensitive gate
1
t
p
T
EC103D1
t
p
© NXP B.V. 2008. All rights reserved.
Max
60
-
(s)
003aaa108
=
t
T
t
p
10
Unit
K/W
K/W
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