MCR08BT1,115 NXP Semiconductors, MCR08BT1,115 Datasheet - Page 7

• Manufacturer Part Number: MCR08BT1,115
• Description: THYRISTOR 0.8A 200V SOT223
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of MCR08BT1,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 200V
• Off-state Voltage: 200V
• Average On-state Current: 500mA
• Hold Current: 5mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 800mV
• Peak Reverse Gate Voltage: 5V
• Package Type: SC-73
• Peak Repeat Off Current: 100uA
• Peak Surge On-state Current (max): 9A
• On State Voltage(max): 1.7@1.2AV
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056931115; MCR08BT1 T/R; MCR08BT1 T/R

Philips Semiconductors
7. Package information
9397 750 13513
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
Rev. 03 — 29 November 2004
150
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
(2)
(1)
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
MCR08BT1
100
Thyristor; logic level
T
j
001aac115
( C)
150
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