BT145-800R,127 NXP Semiconductors, BT145-800R,127 Datasheet - Page 3

• Manufacturer Part Number: BT145-800R,127
• Description: THYRISTOR 25A 800V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BT145-800R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.5V
• Current - On State (it (av)) (max): 16A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 35mA
• Current - Hold (ih) (max): 60mA
• Current - Off State (max): 1mA
• Current - Non Rep. Surge 50, 60hz (itsm): 300A, 330A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 25A
• Breakover Current Ibo Max: 330 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 1 mA
• Forward Voltage Drop: 1.5 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 60 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3670-5; 933826840127; BT145-800R

Philips Semiconductors
October 1997
Thyristors
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
25
20
15
10
30
25
20
15
10
Fig.3. Maximum permissible rms current I
5
0
average on-state current, I
5
0
on-state current I
-50
10000
0
Ptot / W
1000
IT(RMS) / A
100
conduction
angle
degrees
10us
versus mounting base temperature T
30
60
90
120
180
ITSM / A
I
T
Tj initial = 25 C max
sinusoidal currents, t
form
factor
4
2.8
2.2
1.9
1.57
a
dI /dt limit
T
T
5
0
factor = I
I TSM
time
4
100us
TSM
2.8
IF(AV) / A
, versus pulse width t
BT145
BT145
Tmb / C
10
T(RMS)
BT145
50
T / s
2.2
T(AV)
/ I
1.9
T(AV)
p
, where a = form
1ms
10ms.
.
15
100
Tmb(max) / C
101 C
a = 1.57
tot
, versus
mb
T(RMS)
p
, for
10ms
.
20
150
100
105
110
115
120
125
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
350
300
250
200
150
100
1.6
1.4
1.2
0.8
0.6
0.4
50
50
40
30
20
10
0
1
0.01
(T
0
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
BT151
BT145
BT145
Tj / C
50
mb
I
T
Tj initial = 25 C max
100
Product specification
1
BT145 series
T
101˚C.
100
I TSM
time
Rev 1.200
1000
150
10
j
.