Phase Control Thyristor
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Symbol
I
I
I
I
(di/dt)
(dv/dt)
P
P
V
T
T
T
M
F
V
Weight
*
1300
1700
V
V
T(RMS)
T(AV)M
TSM
2
t
900
GM
G(AV)
RGM
VJ
VJM
stg
C
ISOL
Verson io1R only
V
d
RSM
DSM
*
cr
cr
1200
1600
V
V
800
RRM
DRM
V
Conditions
T
T
T
V
T
V
T
V
T
V
T
f = 50 Hz, t
V
I
di
T
R
T
I
Version io1:
Version io1R: mounting force with clip
50/60 Hz, RMS, t = 1 minute, leads-to-tab
G
T
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
GK
G
= I
= 0.3 A
Type
CS 45-08io1
CS 45-12io1
CS 45-16io1 CS 45-16io1R
/dt = 0.3 A/µs
= 75°C; 180° sine
= 0 V
= 0 V
= 0 V
= 0 V
=
= T
= 45°C
= T
= 45°C
= T
= T
= T
= T
= ¥; method 1 (linear voltage rise)
T(AV)M
2
/
3
VJM
VJM
VJM
VJM
VJM
VJM
V
DRM
;
P
= 200 µs
mounting torque M3
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
V
t
t
P
P
DR
=
= 300 µs
=
2
30 µs
/
3
V
DRM
T
= 40 A
T
= I
T(AV)M
A
-40...+140
-40...+125
Maximum Ratings
0.8...1.2
20...120
1350
1300
1050
1030
1000
2500
520
560
460
500
150
500
140
0.5
75
48
10
10
5
6
G
A/µs
A/µs
V/µs
V~
Nm
A
A
A
A
°C
°C
°C
W
W
W
A
A
A
A
A
A
V
N
g
2
2
2
2
s
s
s
s
C
V
I
I
TO-247 AD
Version io1
C
C = Cathode, A = Anode, G = Gate
Features
• Thyristor for line frequency
• International standard package
• Planar passivated chip
• Long-term stability of blocking
• Version AR isolated and
Applications
• Motor control
• Power converter
• AC power controller
• Switch-mode and resonant mode
• Light and temperature control
Advantages
• Easy to mount with 1 screw
• Space and weight savings
• Simple mounting
• Improved temperature and power
A
T(RMS)
T(AV)M
G
JEDEC TO-247
currents and voltages
RRM
Epoxy meets UL 94V-0
power supplies
(isolated mounting screw hole)
cycling
UL registered E153432
= 800-1600 V
= 75 A
= 48 A
A (TAB)
C
A
ISOPLUS 247
G
*
Patent pending
CS 45
Version io1R
back surface
Isolated
1 - 3
TM
*