TYN1008RG STMicroelectronics, TYN1008RG Datasheet - Page 4

• Manufacturer Part Number: TYN1008RG
• Description: SCR 1000V 8A TO220AB
• Manufacturer: STMicroelectronics

Specifications of TYN1008RG

• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 5A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 25mA
• Current - Hold (ih) (max): 45mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4482-5

Characteristics
4/12
Figure 3.
Figure 5.
Figure 7.
1.00
0.10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
I
Recommended pad layout,
FR4 printed circuit board
H
& I
-20
(A)
th(j-a)
L
I
GT
j
25
Average and DC on-state current
versus ambient temperature
(DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Relative variation of gate trigger
and holding current versus junction
temperature
= 180°
/R
1E-1
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D.C.
20
]
50
DPAK
1E+0
j
T
40
T (°C)
amb
t (s)
j
p
(°C)
TO-220AB / IPAK
60
Recommended pad layout,
FR4 printed circuit board
75
1E+1
80
TN8 and TYNx8
100
100
1E+2
Doc ID 7476 Rev 6
120
5E+2
125
140
TN805, TN815, TS820, TYN608, TYN808, TYN1008
Figure 4.
Figure 6.
Figure 8.
1.0
0.5
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
-40
1E-3
I [R
K=[Z
I
H
GT H L
TS8
,I ,I [T ] /
GK
th(j-c)
R
-20
GK
I
H
] / I [
& I
= 1k
I
GT
L
/R
H
j
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS820
Relative variation of holding
current versus gate-cathode
resistance (typical values)
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
]
1E-1
1E-2
20
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
100
T
j
= 25°C
120
1E+0
1E+1
140