IMZ4T108 Rohm Semiconductor, IMZ4T108 Datasheet - Page 2

• Manufacturer Part Number: IMZ4T108
• Description: TRANS NPN/PNP 32V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMZ4T108

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 250MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V, - 32 V
• Emitter- Base Voltage Vebo: 5 V, - 5 V
• Continuous Collector Current: 500 mA, - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 250 MHz at NPN, 200 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 250 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMZ4T108; IMZ4T108TR

Transistors
Tr
Tr
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Type
EMZ1
UMZ1N
IMZ1A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta=25°C)
Packaging specifications
1
Measured using pulse current.
2
Measured using pulse current.
(NPN)
(PNP)
Parameter
Parameter
Package
Code
Basic ordering
unit (pieces)
T2R
8000
Symbol
V
BV
BV
BV
I
Cob
Symbol
I
CE(sat)
h
CBO
EBO
BV
BV
BV
V
f
FE
h
Cob
CBO
CEO
EBO
T
I
I
CE(sat)
CBO
EBO
FE
f
T
CBO
CEO
EBO
∗
Taping
3000
Min.
120
TR
40
32
5
−
−
−
−
−
Min.
−40
−32
120
−5
−
−
−
−
−
Typ.
250
6.5
−
−
−
−
−
−
−
Typ.
200
T108
−
−
−
−
−
−
−
7
3000
Max.
560
1.0
1.0
0.6
−
−
−
−
−
Max.
−1.0
−1.0
−0.6
560
−
−
−
−
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
= 100µA
= 1mA
= 100µA
/I
I
I
I
V
V
I
V
V
V
C
C
E
C
B
CB
EB
CE
CE
CB
= −100µA
= 20V
= 4V
= 3V, I
= 5V, I
= 10V, I
= −100µA
= −1mA
/I
= 500mA/50mA
B
= −4V
= −20V
= −3V, I
= −5V, I
= −10V, I
= −300mA/−30mA
C
E
= 100mA
= −20mA, f = 100MHz
E
= 0A, f = 1MHz
C
E
= −100mA
= 20mA, f = 100MHz
E
Conditions
= 0A, f = 1MHz
Conditions
Rev.A
∗
IMZ4
2/4