IMZ4T108 Rohm Semiconductor, IMZ4T108 Datasheet - Page 2
![TRANS NPN/PNP 32V 500MA SOT-457](/photos/1/38/13824/sc-74-6_sml.jpg)
IMZ4T108
Manufacturer Part Number
IMZ4T108
Description
TRANS NPN/PNP 32V 500MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMZ4T108.pdf
(5 pages)
Specifications of IMZ4T108
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
300mW
Frequency - Transition
250MHz, 200MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V, - 32 V
Emitter- Base Voltage Vebo
5 V, - 5 V
Continuous Collector Current
500 mA, - 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
250 MHz at NPN, 200 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
250 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMZ4T108
IMZ4T108TR
IMZ4T108TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IMZ4T108
Manufacturer:
RENES
Quantity:
6 000
Company:
Part Number:
IMZ4T108
Manufacturer:
ROHM
Quantity:
6 156
Part Number:
IMZ4T108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Tr
Tr
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Type
EMZ1
UMZ1N
IMZ1A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta=25°C)
Packaging specifications
1
Measured using pulse current.
2
Measured using pulse current.
(NPN)
(PNP)
Parameter
Parameter
Package
Code
Basic ordering
unit (pieces)
T2R
8000
Symbol
V
BV
BV
BV
I
Cob
Symbol
I
CE(sat)
h
CBO
EBO
BV
BV
BV
V
f
FE
h
Cob
CBO
CEO
EBO
T
I
I
CE(sat)
CBO
EBO
FE
f
T
CBO
CEO
EBO
∗
Taping
3000
Min.
120
TR
40
32
5
−
−
−
−
−
Min.
−40
−32
120
−5
−
−
−
−
−
Typ.
250
6.5
−
−
−
−
−
−
−
Typ.
200
T108
−
−
−
−
−
−
−
7
3000
Max.
560
1.0
1.0
0.6
−
−
−
−
−
Max.
−1.0
−1.0
−0.6
560
−
−
−
−
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
= 100µA
= 1mA
= 100µA
/I
I
I
I
V
V
I
V
V
V
C
C
E
C
B
CB
EB
CE
CE
CB
= −100µA
= 20V
= 4V
= 3V, I
= 5V, I
= 10V, I
= −100µA
= −1mA
/I
= 500mA/50mA
B
= −4V
= −20V
= −3V, I
= −5V, I
= −10V, I
= −300mA/−30mA
C
E
= 100mA
= −20mA, f = 100MHz
E
= 0A, f = 1MHz
C
E
= −100mA
= 20mA, f = 100MHz
E
Conditions
= 0A, f = 1MHz
Conditions
Rev.A
∗
IMZ4
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