IMZ4T108 Rohm Semiconductor, IMZ4T108 Datasheet - Page 4

• Manufacturer Part Number: IMZ4T108
• Description: TRANS NPN/PNP 32V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMZ4T108

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 250MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V, - 32 V
• Emitter- Base Voltage Vebo: 5 V, - 5 V
• Continuous Collector Current: 500 mA, - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 250 MHz at NPN, 200 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 250 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMZ4T108; IMZ4T108TR

Transistors
Tr
1000
2
− 0.05
− 0.03
− 0.02
− 0.01
Fig.14 Collector-emitter saturation
500
200
100
− 1.0
− 0.5
− 0.3
− 0.2
− 0.1
(PNP)
−500
−200
−100
50
20
−0.5
−0.2
−0.1
−50
−20
−10
Fig.8 Grounded emitter propagation
Fig.11 DC current gain vs. collector
−5
−2
−1
−1
0
BASE TO EMITTER VOLTAGE : V
Ta = 100°C
Ta = 100°C
−1
−
−2
0.2
COLLECTOR CURRENT : I
voltage vs. collector current ( Ι )
− 55°C
COLLECTOR CURRENT : I
characteristics
25°C
−55°C
−2
−
25°C
0.4
current ( Ι )
−5 −10 −20
−
0.6
−5 −10 −20
−
0.8
−
1.0
−
V
1.2
−50 −100 −200 −500 −1000
CE
−50 −100 −200 −500 −1000
= − 5V
−
1.4
− 3V
− 1V
−
1.6
C
C
(mA)
Ta = 25°C
−
1.8
l
(mA)
C
V
/l
CE
B
BE
−
= 10
2.0
= −3V
(V)
−
2.2
−100
−80
−60
−40
−20
1000
1000
COLLECTOR TO EMITTER VOLTAGE : V
500
200
100
0
500
200
100
50
Fig.9 Grounded emitter output
0.5
0
50
20
Fig.15 Gain bandwidth product vs.
Ta = 25°C
−1mA
Fig.12 DC current gain vs. collector
−1
COLLECTOR CURRENT : I
characteristics ( Ι )
−1
1
EMITTER CURRENT : I
−2
emitter current
current ( ΙΙ )
2
−5 −10 −20
Ta = 100°C
−2
− 55°C
25°C
5
−0.9mA
−3
−0.8mA
−0.7mA
−50 −100 −200 −500 −1000
10
−0.6mA
E
−0.5mA
−0.4mA
−4
(mA)
Ta = 25°C
V
−0.3mA
−0.2mA
C
20
CE
−0.1mA
I
V
(mA)
B
=0 A
CE
= − 5V
= − 3V
CE
−5
(V)
50
Fig.16 Collector output capacitance vs.
Fig.13 Collector-emitter saturation
−500
−400
−300
−200
−100
− 0.05
− 0.02
− 0.5
− 0.2
− 0.1
100
50
20
10
0
− 1
−0.5
COLLECTOR TO EMITTER VOLTAGE : V
5
2
0
− 1 − 2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
Fig.10 Grounded emitter output
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
voltage vs. collector current ( Ι )
COLLECTOR CURRENT : I
I
C
−1
/I
B
=50
20
10
− 5 − 10 − 20
characteristics ( ΙΙ )
−2
Rev.A
−5
−5
− 50 − 100 − 200 − 500
−10
−2.0mA
−1.5mA
−5.0mA
−4.5mA
C
−1.0mA
Ta = 25°C
−4.0mA
−20
(mA)
Ta = 25°C
Ta = 25°C
f=1MHz
I
I
IMZ4
C
E
−3.5mA
−3.0mA
−0.5mA
=0A
=0A
−2.5mA
I
: V
B
=0 A
EB
CB
CE
(V)
(V)
4/4
−10
(V)
−50