PMBT3904YS,115 NXP Semiconductors, PMBT3904YS,115 Datasheet - Page 2

TRANS NPN/NPN 40V 200MA SOT-363

PMBT3904YS,115

Manufacturer Part Number
PMBT3904YS,115
Description
TRANS NPN/NPN 40V 200MA SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3904YS,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
350mW
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Transistor Type
2 NPN (Dual)
Frequency - Transition
300MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Collector/base Gain Hfe Min
180
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
200 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061454115
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PMBT3904YS_1
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
4
5
6
Type number Package
PMBT3904YS SC-88
Type number
PMBT3904YS
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Name
Rev. 01 — 12 May 2009
Description
plastic surface-mounted package; 6 leads
40 V, 200 mA NPN/NPN general-purpose double transistor
Marking code
BC*
Simplified outline
1
6
[1]
5
2
PMBT3904YS
3
4
Graphic symbol
© NXP B.V. 2009. All rights reserved.
TR1
6
1
sym020
Version
SOT363
5
2
4
3
TR2
2 of 12

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