PUMX2,125 NXP Semiconductors, PUMX2,125 Datasheet - Page 3

• Manufacturer Part Number: PUMX2,125
• Description: TRANS NPN/NPN DBL 50V SC-88
• Manufacturer: NXP Semiconductors

Specifications of PUMX2,125

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934059964125

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PUMX2_2
Product data sheet
Table 6.
[1]
Table 7.
T
Symbol
Per transistor
R
Per device
R
Symbol
Per transistor
I
I
h
V
f
C
CBO
EBO
T
amb
FE
CEsat
th(j-a)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25
°
C unless otherwise specified.
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
transition
frequency
collector
capacitance
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
Rev. 02 — 17 November 2009
Conditions
V
V
T
V
V
I
V
f = 100 MHz
V
f = 1 MHz
C
j
CB
CB
EB
CE
CE
CB
= 150 °C
= 50 mA; I
= 60 V; I
= 60 V; I
= 7 V; I
= 6 V; I
= 12 V; I
= 12 V; I
Conditions
in free air
in free air
C
C
E
E
B
E
E
NPN/NPN general-purpose double transistors
= 0 A
= 1 mA
= 0 A
= 0 A;
= 5 mA
= 2 mA;
= i
e
= 0 A;
[1]
[1]
Min
-
-
Min
-
-
-
120
-
100
-
Typ
-
-
Typ
-
-
-
250
-
-
-
© NXP B.V. 2009. All rights reserved.
PUMX2
Max
694
417
Max
100
50
100
560
250
-
3
Unit
K/W
K/W
Unit
nA
μA
nA
mV
MHz
pF
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