PEMX1,115 NXP Semiconductors, PEMX1,115 Datasheet - Page 4

• Manufacturer Part Number: PEMX1,115
• Description: TRANS NPN 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMX1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056704115; PEMX1 T/R; PEMX1 T/R

NXP Semiconductors
2001 Nov 07
handbook, full pagewidth
NPN general purpose double transistor
h FE
300
200
100
0
10
−1
Fig.2 DC current gain as a function of collector current; typical values.
1
4
10
10
2
I C mA
Product data sheet
MGU430
PEMX1
10
3