PEMT1,115 NXP Semiconductors, PEMT1,115 Datasheet - Page 2

• Manufacturer Part Number: PEMT1,115
• Description: TRANS PNP 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMT1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056707115; PEMT1 T/R; PEMT1 T/R

NXP Semiconductors
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in a SOT666 plastic package.
NPN complement: PEMX1.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07
PEMT1
Per transistor
V
V
V
I
I
I
P
T
T
T
Per device
P
SYMBOL
C
CM
BM
same PCB area
stg
j
amb
CBO
CEO
EBO
tot
tot
PNP general purpose double transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
MARKING CODE
FF
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
2
CONDITIONS
PINNING
Top view
PIN
1, 4
2, 5
6, 3
Fig.1 Simplified outline (SOT666) and symbol.
6
1
emitter
base
collector
5
2
3
4
−
−
−
−
−
−
−
−65
−
−65
−
TR1; TR2
TR1; TR2
TR1; TR2
MIN.
DESCRIPTION
MAM450
−50
−40
−5
−100
−200
−200
200
+150
150
+150
300
Product data sheet
TR1
MAX.
6
1
PEMT1
5
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
mW
UNIT
4
3
TR2