EMD12T2R Rohm Semiconductor, EMD12T2R Datasheet
EMD12T2R
Manufacturer Part Number
EMD12T2R
Description
TRANS PNP/NPN 50V 30MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.UMD12NTR.pdf
(4 pages)
Specifications of EMD12T2R
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Dc Current Gain Hfe
68
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMD12T2R
EMD12T2RTR
EMD12T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMD12T2R
Manufacturer:
DIODES
Quantity:
30 000
Part Number:
EMD12T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power management
(dual digital transistors)
EMD12 / UMD12N
1) Both the DTA144E and DTC144E in a EMT or UMT
∗1 120mW per element must not be exceeded.
PNP type negative symbols have been omitted
∗Transition frequency of the device.
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Features
Equivalent circuit
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25°C)
External dimensions (Units : mm)
Electrical characteristics (Ta=25°C)
DTr2
package.
Basic ordering unit (pieces)
(3)
(4)
Parameter
R
R
2
1
(5)
Package
(2)
Marking
R
Code
Type
R
1
Parameter
2
(1)
(6)
DTr1
R
R
1
2
=47kΩ
=47kΩ
PNP type negative symbols have been omitted
Symbol
Tstg
V
V
Pd
I
I
Tj
CC
C
O
IN
EMD12
EMT6
8000
T2R
D12
150(TOTAL)
−55 ~ +150
Limits
100
150
−10
50
40
30
UMD12N
Symbol
UMT6
R
3000
V
V
V
I
D12
TR
O (off)
2
O (on)
R
I (off)
I (on)
G
I
f
/ R
I
T
1
I
1
Unit
mW ∗1
mA
mA
°C
°C
V
V
Min.
32.9
0.8
68
−
3
−
−
−
−
Typ.
0.1
250
47
−
−
−
−
−
1
EMD12
ROHM : EMT6
UMD12N
ROHM : UMT6
EIAJ : SC-88
Max.
0.18
61.1
0.5
0.3
0.5
1.2
−
−
−
MHz
Unit
mA
µA
kΩ
V
V
V
−
−
0.1Min.
V
V
I
V
V
I
V
( 4 )
( 5 )
( 6 )
O
O
CC
O
I
CC
CE
=10/−10mA, I
=5/−5mA, V
=5/−5V
=0.3/−0.3V, I
1.2
1.6
=5/−5V, I
=50/−50V, V
=10/−10V, I
EMD12 / UMD12N
1.25
2.1
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
O
O
=100/−100µA
Conditions
=5/−5V
E
I
O
=0.5/−0.5mA
I
=−5/5mA, f=100MHz
=0V
=2/−2mA
−
−
Rev.A
∗
1/3
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EMD12T2R Summary of contents
Page 1
Transistors Power management (dual digital transistors) EMD12 / UMD12N Features 1) Both the DTA144E and DTC144E in a EMT or UMT package. Equivalent circuit (3) (2) ( DTr1 DTr2 (4) (5) (6) ...
Page 2
Transistors Electrical characteristics curves DTr1 (DTC144E) 100 =0. Ta=−40°C 25°C 5 100° 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.1 Input ...
Page 3
Transistors Electrical characteristics curves DTr2 (DTA144E) 100 =0. Ta=−40°C 25°C 5 100° 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.1 Input ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...