EMD12T2R Rohm Semiconductor, EMD12T2R Datasheet - Page 2

• Manufacturer Part Number: EMD12T2R
• Description: TRANS PNP/NPN 50V 30MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD12T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 68
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD12T2R; EMD12T2RTR

Transistors
Electrical characteristics curves DTr1 (DTC144E)
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
50m
20m
10m
100
5m
2m
1m
50
20
10
100µ 200µ
100µ 200µ
5
2
1
1
Fig.4 Output voltage vs. output
(ON characteristics)
Ta=100°C
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
500µ 1m
500µ 1m
−40°C
100°C
25°C
25°C
2m
2m
5m 10m 20m
5m 10m 20m
O
O
(A)
(A)
V
l
O
O
/l
=0.3V
I
=20
50m 100m
50m 100m
Fig.2 Output current vs. input voltage
500µ
200µ
100µ
10m
50µ
20µ
10µ
5m
2m
1m
5µ
2µ
1µ
0
Ta=100°C
V
CC
(OFF characteristics)
−40°C
=5V
0.5
25°C
INPUT VOLTAGE : V
1.0
1.5
2.0
I(off)
(V)
2.5
3.0
500
200
100
50
20
10
1k
5
2
1
100µ 200µ
Fig.3 DC current gain vs. output
EMD12 / UMD12N
Ta=100°C
OUTPUT CURRENT : I
−40°C
current
25°C
500µ 1m
Rev.A
2m
5m 10m 20m
O
(A)
V
O
=5V
50m 100m
2/3