MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 25

DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT46H8M32LFB5-6 IT:H

Manufacturer Part Number
MT46H8M32LFB5-6 IT:H
Description
DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H8M32LFB5-6 IT:H

Density
256 Mb
Maximum Clock Rate
166 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
6.5|5 ns
Operating Temperature
-40 to 85 °C
Organization
8Mx32
Address Bus
14b
Access Time (max)
6.5/5ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Table 9: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Parameter
Half-clock period
Data-out High-Z
window from
CK/CK#
Data-out Low-Z window
from CK/CK#
Address and con-
trol input hold time
Address and con-
trol input hold time
Address and con-
trol input setup
time
Address and con-
trol input setup
time
Address and control input
pulse width
LOAD MODE REGISTER
command cycle time
DQ–DQS hold, DQS to first
DQ to go nonvalid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE
command
ACTIVE to ACTIVE/ACTIVE to
AUTO REFRESH command
period
Active-to-read or write delay
Refresh period
Average periodic refresh in-
terval
AUTO REFRESH command
period
PRECHARGE command peri-
od
DQS read
preamble
CL = 3
CL = 2
CL = 3
slew
slow
slew
slew
slow
slew
rate
rate
rate
rate
fast
fast
Symbol
t
t
t
t
t
t
t
t
RPRE
MRD
t
t
t
t
QHS
RCD
REFI
t
t
IPW
RAS
t
t
t
REF
RFC
t
t
QH
IH
IH
HP
HZ
RC
RP
LZ
IS
IS
F
S
F
S
t
t
Min
t
QHS
HP -
CH,
t
1.0
0.9
1.1
0.9
1.1
2.3
0.9
40
55
15
72
15
CL
2
-5
Electrical Specifications – AC Operating Conditions
DD
70,000
Max
/V
5.0
6.5
0.5
7.8
1.1
64
DDQ
= 1.70–1.95V
t
t
Min
58.2
16.2
16.2
t
QHS
HP -
CH,
t
1.0
1.0
1.2
1.0
1.2
2.5
0.9
42
72
CL
25
2
-54
256Mb: x16, x32 Mobile LPDDR SDRAM
70,000
Max
5.0
6.5
0.5
7.8
1.1
64
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
Min
t
QHS
HP -
CH,
t
1.0
1.0
1.2
1.1
1.2
2.6
0.9
42
60
18
72
18
CL
2
-6
70,000
Max
0.65
5.0
6.5
7.8
1.1
64
t
t
Min
67.5
22.5
22.5
t
QHS
HP -
CH,
t
1.0
1.3
1.5
1.3
1.5
2.6
0.9
45
72
CL
2
©2008 Micron Technology, Inc. All rights reserved.
-75
70,000
Max
0.75
6.0
6.5
7.8
1.1
64
Unit
t
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
μs
CK
Notes
19, 20
15, 21
15, 21
13, 17
18
19
16
22
23

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