MT48H16M16LFBF-75 IT:H Micron Technology Inc, MT48H16M16LFBF-75 IT:H Datasheet - Page 60

• Manufacturer Part Number: MT48H16M16LFBF-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54VFBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 31: Terminating a WRITE Burst
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
Command
Address
1. DQM is LOW.
CLK
DQ
Transitioning data
WRITE
Bank,
Col n
T0
D
IN
TERMINATE
BURST
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T1
60
COMMAND
Address
Data
Don’t Care
T2
NEXT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation