MT48H8M16LFB4-75 IT:K Micron Technology Inc, MT48H8M16LFB4-75 IT:K Datasheet - Page 51

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 20: READ-to-WRITE With Extra Clock Cycle
Figure 21: READ-to-PRECHARGE
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Note:
Command
Command
Command
Address
Address
Address
1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be
1. DQM is LOW.
DQM
CLK
to any bank.
CLK
CLK
DQ
DQ
DQ
Bank a,
Bank a,
Bank,
T0
T0
Col n
T0
READ
Col n
READ
READ
Col
CL = 2
CL = 3
T1
T1
T1
NOP
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
51
T2
T2
T2
NOP
NOP
NOP
D
OUT
Transitioning data
T3
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
NOP
D
D
D
t HZ
OUT
OUT
OUT
PRECHARGE
PRECHARGE
(a or all)
(a or all)
T4
T4
T4
Bank
Bank
NOP
X = 1 cycle
D
D
Transitioning data
OUT
OUT
X = 2 cycles
T5
T5
T5
Don’t Care
Bank,
WRITE
Col b
NOP
NOP
D
D
D
OUT
OUT
IN
t DS
t RP
t RP
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T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
ACTIVE
Bank a,
ACTIVE
Bank a,
T7
T7
Row
Row