MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 82

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Clock Suspend
Figure 50: Clock Suspend During WRITE Burst
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Command
Internal
Address
The clock suspend mode occurs when a column access/burst is in progress and CKE is
registered LOW. In the clock suspend mode, the internal clock is deactivated, freezing
the synchronous logic.
For each positive clock edge on which CKE is sampled LOW, the next internal positive
clock edge is suspended. Any command or data present on the input balls when an in-
ternal clock edge is suspended will be ignored; any data present on the DQ balls
remains driven; and burst counters are not incremented, as long as the clock is suspended.
Exit clock suspend mode by registering CKE HIGH; the internal clock and related opera-
tion will resume on the subsequent positive clock edge.
clock
1. For this example, BL = 4 or greater, and DQM is LOW.
CKE
CLK
D
IN
NOP
T0
WRITE
Bank,
Col n
D
T1
IN
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
T2
82
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
D
T4
IN
Don’t Care
T5
NOP
D
IN
©2008 Micron Technology, Inc. All rights reserved.
Clock Suspend