MT48LC16M16A2BG-75:D Micron Technology Inc, MT48LC16M16A2BG-75:D Datasheet - Page 22

• Manufacturer Part Number: MT48LC16M16A2BG-75:D
• Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2BG-75:D

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54VFBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Electrical Specifications
Table 7: Absolute Maximum Ratings
Table 8: DC Electrical Characteristics and Operating Conditions
Notes 1–3 apply to all parameters and conditions; V
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Voltage/Temperature
Voltage on V
Voltage on inputs, NC, or I/O balls relative to V
Storage temperature (plastic)
Power dissipation
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage: I
Output low voltage: I
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
Operating temperature:
DD
/V
IN
DDQ
≤ V
OUT
supply relative to V
Notes:
OUT
DD
Note:
= 4mA
(All other balls not under test = 0V)
= –4mA
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
1. All voltages referenced to V
2. The minimum specifications are used only to indicate cycle time at which proper opera-
3. An initial pause of 100μs is required after power-up, followed by two AUTO REFRESH
4. V
V
tion over the full temperature range is ensured; (0°C ≤ TA ≤ +70°C (commercial), –40°C ≤
TA ≤ +85°C (industrial), and –40°C ≤ TA ≤ +105°C (automotive)).
commands, before proper device operation is ensured. (V
up simultaneously. V
mand wake-ups should be repeated any time the
be greater than one-third of the cycle rate. V
width ≤3ns.
DD
DD
IH
overshoot: V
.
and V
SS
DDQ
SS
must be within 300mV of each other at all times. V
OUT
Commercial
Industrial
Automotive
IH,max
DD
≤ V
/V
SS
DDQ
DDQ
= V
and V
DDQ
= +3.3V ±0.3V
22
SS
SSQ
.
+ 2V for a pulse width ≤ 3ns, and the pulse width cannot
V
Symbol
must be at same potential.) The two AUTO REFRESH com-
DD
V
V
V
V
I
, V
T
T
T
OZ
I
OH
OL
IH
L
IL
A
A
A
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DDQ
IL
V
Symbol
Min
undershoot: V
DD
–0.3
–40
–40
2.4
–5
–5
T
3
2
–
0
V
256Mb: x4, x8, x16 SDRAM
/V
STG
–
t
IN
REF refresh requirement is exceeded.
DDQ
Electrical Specifications
DD
Min
–55
–1
–1
V
–
and V
© 1999 Micron Technology, Inc. All rights reserved.
DD
IL,min
Max
+105
+0.8
+70
+85
3.6
0.4
–5
5
–
+ 0.3
Max
+150
DDQ
+4.6
+4.6
DDQ
= –2V for a pulse
1
must not exceed
must be powered
Unit
Unit
°C
W
μA
μA
V
˚C
˚C
˚C
V
V
V
V
V
Notes
Notes
1
4
4